Self-Aligned AlGaN/GaN High Electron Mobility Transistors

In this paper, we present high performance 0.25mum gate-length self-aligned AIGaN/GaN HEMTs on 6H-SiC substrates using a single ohmic step. Our recently developed Mo/Al/Mo/Au-based ohmic contact requiring annealing temperatures between annealing temperatures 500 and 600degC was utilized. Ohmic contact resistances between 0.3 - 0.5 ohm-mm have been achieved.