2.4-$\mu\hbox{m}$-Cutoff AlGaAsSb/InGaAsSb Phototransistors for Shortwave-IR Applications

Shortwave-infrared (IR) detectors are critical for several applications, including remote sensing and optical communications. Several detectors are commercially available for this wavelength range, but they lack sufficient gain that limits their detectivity. The characterization results of AlGaAsSb/InGaAsSb phototransistors for shortwave-IR application are reported. The phototransistors are grown using molecular beam epitaxy technique. Spectral-response measurements showed a uniform responsivity between 1.2- and 2.4- region with a mean value of 1000 A/W. A maximum detectivity of was obtained at 2 at and 1.3 V.