Operation of a Work Function Type SOI Temperature Sensor up to 250°C

Bulk-Si ICs cannot operate over 150degC, due to the reverse bias leakage current of the p-n junction in MOSFETs or diode components. In this paper, we investigated a work function type temperature sensor on a SOI substrate, which generates voltage output by the work function difference and is superior to diode-type temperature sensors at high temperature. This SOI temperature sensor is operated up to 250degC, and the consumption current is one order of magnitude lower than that of a bulk-Si temperature sensor.