Development of a self-aligned pnp HBT for a complementary thin-SOI SiGeC BiCMOS technology

This paper describes the development of a thin-SOI pnp SiGeC HBT using a self-aligned selective epitaxy emitter/base architecture. Static and dynamic device characteristics are presented, and first results from a full 130 nm thin-SOI complementary SiGeC BiCMOS technology are reported.