Strategic Considerations for Unipolar SiC Switch Options: JFET vs. MOSFET

This paper compares the two most prominent alternatives of an upcoming commercial SiC power switch: JFET vs. MOSFET. Besides the lower specific R
_on
achievable with a SiC-JFET according to today's technological progress, also reliability and long term stability concerns give advantage to the JFET concept. The major drawback of the JFET, its normally on characteristic, can easily be overcome by a cascade configuration together with a fast low voltage power MOSFET. In some applications the self conducting characteristic is even beneficial.