InP-based Membrane Photodetectors for Optical Interconnects to Si

We present the design, fabrication and a characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Waveguide losses in the Si-wiring circuit are below 5 dB/cm. Measured detector responsivity is 0.45 A/W. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.