Synthesis and Basic Properties of Ferroelectric Thin Films. Methods Materials and Novel Applications

The present study is devoted to synthesis and investigation of basic properties of ferroelectric thin films. The radio frequency sputtering method was utilized to grow Pb(Zr
_1.x
Ti
_x
)O
₃
-based ferroelectric thin films (PZT) whereas the sol-gel-type chemical solution deposition method was used for preparation of Bi
₄
Ti
₃
O
₁₂
(BTO) and (Ba
_0.6
Sr
_0.4
)TiO
₃
(BST) thin films. The thin films were characterized in terms of their microstructure, crystalline structure, chemical composition and dielectric properties. Complex impedance spectroscopy was used to measure frequency-dependent dielectric properties of the thin films. Great application potential of the ferroelectric thin films was considered especially as active elements of the piezoelectric sensors (PZT), UV-radiation detectors (BTO) and tunable microwave devices (BST).