Re-examination of Flat-Band Voltage Shift for High-k MOS Devices

We have systematically investigated the V
FB
shift in the case of the stacked bi-layer high-k dielectrics with paying attention to the high-k/IL-SiO
2
interface. We demonstrate for the first time that V
FB
shifts are determined predominantly by the high-k/IL-SiO
2
interface, while the gate/high-k interface plays little role.