Highly uniform GaAs/AlGaAs GRIN-SCH SQW diode lasers grown by organometallic vapor phase epitaxy

Broad-area graded-index separate-confinement-heterostructure (GRIN-SCH) diode lasers were fabricated with a single 10-nm-thick Al/sub 0.07/Ga/sub 0.93/As quantum-well active layer. For the characteristics measured during pulsed operation of 175-192 lasers with a cavity length of 500 mu m, distributed over a 16 cm/sup 2/ wafer, the mean values and standard deviations are, respectively: threshold current density 288 and 11.3 A/cm/sup 2/; differential quantum efficiency 83.0 and 2.5%; and emission wavelength 804.9 and 0.6 nm. For lasers from ten wafers grown under the same nominal conditions, the wavelengths range from 803.5 to 807.4 nm.<
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