A Manufacturable 100NS 16K X 1 Radiation Hardened CMOS SRAM

A fast 16K X 1 bit radiation hardened asynchronous CMOS SRAM is described. The design objectives for the RAM were operation over the full -55°C to 125°C military temperature range, typical address access times of less than 100ns, and total dose hardness to 500K Rad-Si. The process, lithography, design highlights, electrical performance, and radiation characterization are presented.