Charge and Interface State Generation in Field Oxides

Radiation-induced charge and interface state generation are measured in MOS capacitors with steam oxide layers typical of standard field oxides and at low fields (<0.1 MV/cm) typical of device applications. Interface state buildup occurs primarily through a "prompt" process and most of the states are "slow". Free electron-hole pair yield at low fields is reduced from that previously measured in thinner (gate) oxides.