An Experimental Study of Transient Annealing in I2L Devices Following Pulsed Neutron Irradiation

A series of experiments have been performed to determine the annealing factor for I2L devices at 23°C. The devices used in these experiments were obtained from Texas Inst. Inc., and are representative of their "Second-Generation-Oxide-Separated" I2L technology. The devices were irradiated using the SPR reactors at Sandia Laboratories. The annealing factor was obtained through the use of several electrical parameters and the value obtained was greater than 1.7 at a time of 50μs after the peak of the neutron irradiation pulse and decayed down to a value of 1.1 at a time of 1s after the peak of the pulse.