Gamma Irradiation Insensitivity of GaAs Schottky Diodes

Guarded Al-and Au-nGaAs Schottky barrier diodes were subjected to Co60 γ-ray irradiation and their electrical characteristics evaluated. These GaAs Schottkys did not exhibit significant change in their I-V and C-V characteristics up to an absorbed dose as high as 1.5 × 107 rads. Diodes that were previously neutron-irradiated with consequent degradation were also subjected to Co60 irradiation, but no synergistic changes were observed.