A Program-Erasable High-$\kappa$ $\hbox{Hf}_{0.3}{\hbox{N}}_{0.2}{\hbox{O}}_{0.5}$ MIS Capacitor With Good Retention

We describe a programmable-erasable MIS capacitor with a single high-k Hf
_0.3
N
_0.2
O
_0.5
dielectric layer. This device showed a capacitance density of ~6.6 fF/mum
²
, low program and erase voltages of +5 and -5 V, respectively, and a large DeltaV
_fb
memory window of 1.5 V. In addition, the 25degC data retention was good, as indicated by program and erase decay rates of only 2 and 6.2 mV/dec, respectively. Such device retention is attributed to the deep trapping level of 1.05 eV in the Hf
_0.3
N
_0.2
O
_0.5
.