Broad-Band Microwave Voltmeter Using Thermoelectric Effects of Hot Carriers

The performance, especially of the minimum detectable voltage, the dynamic range, and the frequency characteristics on the microwave voltmeter based on the thermoelectric effects of hot carriers in a semiconductor placed in the strip line are described. Parasitic reactance of whisker and mount may be neglected in comparison with spreading resistance of not less than 500 Ω, so that broad-band microwave voltmeter can be obtained. The VSWR was less than 1.2 within the range of frequency from 1 to 12.4 GHz. Making use semiconductor of low resistivity and small diameter point contact diode, a highly sensitive voltmeter is obtained. It was found that the dynamic range depends on the resistivity and the diameter of the electrode.