A recessed-gap capacitive-gate GaAs CCD

A MESFET-compatible structure for GaAs capacitive-gate CCDs that eliminates the necessity for submicrometer interelectrode gaps and simplifies device fabrication is presented. This recessed-gap structure solves problems of low gate-channel-gate breakdown and large parasitic gate-to-gate capacitance associated with ultrasmall gaps. Dark current is also reduced. Modeling and experimental results are reported.<
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