A New PT-Oxide-InALP-Based Schottky Diode Hydrogen Sensor

A new Pt-InAlP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor with high-sensitive hydrogen detection among wide operating temperature regime is demonstrated and studied. Experimentally, the studied hydrogen sensor can be operated systematically either under forward or reverse bias conditions. At 30°C, the relatively hydrogen detection ratio Sr value is increased from 108.8% (107.4%) to 943.1% (1337.3%), under the forward (reverse) bias of 0.3V, when the hydrogen concentration is increased from 4.3 to 9970 ppm H2/air. In addition, it is worth to note that even an extremely low hydrogen concentration of 4.3 ppm H2/air can be effectively detected at the temperature of 30~250°C.