Configuration of JI-LIGBT for Over 100 kHz Switching

We have investigated into following measures to improve the switching performance of L-IGBT. 1. Passive PMOS. 2. N
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layer inside a p-type collector. 3. Wafer thinning. In particular, wafer thinning has brought remarkable improvement of switching performance on L-IGBT as the passive PMOS that we had proposed. Furthermore, we have fabricated a prototype IPD (intelligent power device) that we applied these measures, and a flyback converter controlled by the IPD has well demonstrated 150 kHz operation.