Investigations on 6.5kV Trench IGBT and adapted EmCon Diode

The performance of a new 6.5 kV trench IGBT was investigated. The trench technology utilizing the field stop concept was successfully applied to a 6.5 kV trench IGBT (IGBT
³
). A significant trade off improvement of the on state losses V
_CE(sat)
and the switching losses is demonstrated. An additional improvement was achieved by introducing VLD edge termination into the IGBT
³
technology. This leads to a V
_CE(sat)
reduction of more than 30%, and to a reduction of the switching losses. Finally a 20% increased output current of the modules will be achieved.