The study of plasma doping process for ultra shallow junctions

Further scaling the semiconductor devices down to low dozens of nanometers needs the extremely shallow depth in junction (X
_j
) and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation (IBII) has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation (PSII) technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junction (USJ). In this paper, we used various duty ratios as a parameter for analysis of implantation features. We accomplished the best results - both high dose level and low sheet resistance - with the 5 % of duty ratio except the junction depth which was relatively high.