Effect of Sucrose (C $_{12}{\hbox {H}}_{22}{\hbox {O}}_{11}$) Doping on the Critical Current Density of MgB$_{2}$

MgB
₂
bulk samples doped with sucrose were fabricated with the formula MgB
_2-x
C
_x
(x = 0, 0.08, 0.12, 0.2, 0.3, 0.5). Appropriate amounts of sucrose corresponding to the desired carbon content were added. The doping effect of sucrose was observed. It was found that samples doped with x = 0.2 sucrose have optimized current density at high magnetic field. The optimized sintering temperature for high current density was found to be 850degC. H
_c2
and H
_irr
were both found to be improved due to the sucrose doping.