A 0.13μm CMOS 5GHz Fully Integrated 2x3 MIMO Transceiver IC with over 40dB Isolation

A 5 GHz MIMO direct-conversion transceiver composed of 2 transmitters (TXs) and 3 receivers (RXs) is fabricated with 0.13μm CMOS technology. Die size is 4.56mm × 7.7mm. For driving 10GHz LO signal lines of 5 mm length for both TXs and RXs, inductor-less low-power LO repeaters are equipped in individual LO paths. A linearized RF variable gain amplifier is proposed for low power operation. Isolation of over 40dB is obtained by equipping separate GNDs on both the MIMO IC and the circuit board. This results in negligible degradation of EVM. TX EVM of over -31dB is obtained at -8.6 dBm for 2 TX mode when external LO of 10GHz is applied. The 3RXs and 2TXs with LO paths dissipate 703mW and 412mW from 1.5V, respectively.