Epitaxial Lateral Overgrowth of InP in Micro Line and Submicro Mesh Openings

Towards achieving a large area of InP on silicon, a study of ELOG of InP on InP has been undertaken on lines with different orientations and with openings that are 100 μm long and 10 μm wide. This knowledge has been transposed on sub-micro mesh structures. By this method we have obtained 2 μm thick InP on a mesh patterned InP. The layer exhibits room temperature photoluminescence (PL) with a full width half maximum of 24 nm. We propose that this intensity can be increased if nano-sized openings are used.