Design of Low Phase Noise Dielectric Resonator Oscillators with GaInP HBT devices exploiting a Non-Linear Noise Model

This paper presents the design, implementation and characterization of two dielectric resonator oscillators (DRO) at 7.61 GHz. The circuits consist of a negative resistance monolithic bipole coupled in a series feedback configuration with a ceramic dielectric resonator. The two circuits exploit different sizes for the active device. The adopted monolithic process is a commercially available GalnP HBT with very good low frequency noise performance. The measured phase noise performance of the two circuits are -120 dBc/Hz and -135 dBc/Hz @ 10 kHz from the carrier respectively, which represent to the authors' knowledge state-of-the-art performance for this technology and resonator type. These excellent results have been obtained by means of a proper large signal design technique and exploiting the predictive capability of a non-linear cyclostationary noise model, which proves its excellent predictive capability for these very low phase noise levels.