Strategies of RC Delay Reduction in 45 nm BEOL Technology

According to the 45 nm BEOL technology node, we demonstrated that a homogeneous interlayer dielectric with dielectric constant of 2.25 has a substantial advantage in terms of RC delay reduction compared to other potential architectures such as hybrid and tri-level dielectrics. Combination of the homogeneous interlayer dielectric and ultra-thinned barrier metal lowered the RC delay to 86% compared to that listed in the ITRS 2006 update.