Design of a SiGe Reconfigurable Power Amplifier for RF Applications: Device and Multi-standard Considerations

A low cost integrated reconfigurable power amplifier (PA), dedicated to multi-mode, multi-standard radio frequency front-end (RFFE), is proposed. Power considerations are taken into account in the design through the use of emitter ballasted HBT's and special care on the layout. The reconfigurable amplifier topology is presented, made up of two-stages independently controllable by biasing scheme. It allows the dynamic modification of the RF transistor quiescent current, to adapt both its linearity and its output power in order to fulfill several standards specifications. The PA uses 2.5 V supply voltage and was designed using a 0.25μm SiGe BiCMOS technology.