A Low Phase Noise 10GHz Optoelectronic RF Oscillator Implemented Using CMOS Photonics

A mostly integrated 10.2GHz optoelectronic oscillator (OEO) using Si photonics monolithic integration technology is reported. The OEO is a chip-scale device manufactured using a standard 0.13mum SOI CMOS process, with phase noise of -112dBc/Hz at 10kHz carrier offset and RF power consumption of less than 800mW.