Quantitative Evaluation of Line Width Roughness-Effect on Mosfet Electrical Properties Using a Large Array Test Structure

Variation of the device performances of MOSFET (Gate Length (L
_gate
) of 60nm) due to random line width roughness (LWR) were evaluated through random variation after extracting smoothly changing "systematic" part fitted on the 4th-order polynomial function using a large array test structure. Our results directly suggest that 3σ
_LWR
/L
_gate
-decrease of 0.9% causes 0.046 of decrease in leakage current variation (3σ(log(I
_off
))). Reduction of the variation causes better device performance (1.8% up in drive current (I
_on
) performance).