A novel 1T2UMTJ toggle MRAM with high read/write bandwidth interface

A novel one-transistor-and-two-uneven-magnetic tunneling junctions (1T2UMTJ) cell with toggle switching mode is proposed to increase the packing density and to secure the writing selectivity. Besides, a four-state sense amplifier is proposed to reduce the read access time to less than 25 ns for two accessing data in one cycle. With adequate I/O stages, the 1T2UMTJ toggle MRAM architecture has a double word length or alternatively has a high read/write bandwidth. The two-bit data can be read from or written into a selected memory cell of 1T2UMTJ toggle MRAM within one clock cycle, therefore, demonstrating the promising property of high bandwidth processing capability.