Determination of Intrinsic Spectra from Frontside & Backside Photon Emission Spectroscopy

A model to determine the intrinsic spectra from frontside and backside measured spectra is discussed. The model is then used to derive the intrinsic spectra of a saturated nMOSFET from both front side and backside measured spectra. Although the front side and backside measured spectra differs significantly, the intrinsic spectra derived by the model matches well. This method has also been applied to the case of an emission from nMOSFET due to gate leakage