Study of Plasma Damage at Recess-Channel Gate (RG) Structure During Plasma Nitridation

The plasma induced damage of gate oxide was observed at the recess-channel gate (RG) transistor during the plasma nitridation, which is not observed at the 2-dimensional planar structure. The model of electron shading which is known as a topographical effect in plasma charging can explain the specific structure dependence of the plasma damage. The thinnest bottom gate oxide at the RG structure is found to be severe damaged by positive ions during the plasma nitridation