Effects of Background Doping Concentration on ESD Protection Properties of High Voltage Operation Extended Drain N-Type MOSFET Device

In this study, the effects of background doping concentration (BDC) on the electrostatic discharge (ESD) protection performances of a high voltage operating extended drain N-type MOSFET (EDNMOS) device were evaluated. The EDNMOS device with low BDC suffers from strong snapback in the high current region, which results in poor ESD protection performance. However, the strong snapback can be avoided in the EDNMOS device with high BDC. This implies that a good ESD protection performance can be realized in terms of the EDNMOS device by properly controlling its BDC.