Modeling the Reliability of Metal-Insulator-Metal Capacitors (MIMC) in Analog Devices

Metal-Insulator-Metal (MIM) capacitors are used in many modern analog circuits due to its high capacitance per unit area, low parasitic capacitance and low 1st and 2nd order coefficients [1]. These products require high reliability that is determined by MIMC area, applied voltage and operating temperature. It has been reported [2] that dielectric film thinning is an important mechanism for MIMC breakdown and thus the reliability of the capacitors. In this paper, we will present the modeling results of MIMC reliability in analog circuits. In this study MIMC reliability has been assessed using Vbd distributions to determine parameters for a `dielectric thinning' model. Expected failures over 10-year of life are determined for several products with MIM capacitors. The effectiveness of burn in is evaluated in reducing failures. Design practices to reduce MIMC failures are proposed, such as minimizing application voltage and ensuring stability at V-stress for MIMCs.