Sputtered Ti-Doped Al-Si for Enhanced Interconnect Reliability

It is shown that an Al-Si-Ti alloy containing 0.1-0.2wt.% Ti used as an IC-interconnect material reaches the electromigration strength of Al-Si-Cu and simultaneously avoids the disadvantages of Al-Si-Cu like enhanced corrosion susceptibility or dry etching problems. The stabilizing effect of Ti is demonstrated by life testing and additonally by monitoring changes of residual resistivity and heat transfer to the substrate during temperature current stress.