The Influence of the Chip-Scale-Package on the Functioning and Reliability of RF-MEMS Switches

This paper discusses the influence of materials and structures inside a package on the functioning and reliability of chip-scale-package RF-MEMS switches. It is shown that materials and structures strongly influence electrical performance characteristics such as the switching insertion loss of switches. By computer simulation design for a RF MEMS switches and its package, a model is built with choiceness performance characteristics. Especially, the pull-up electrode can increase reliability of the device, which has extremely low insertion loss of -0.8 dB and a high isolation of -33 dB up to 20 GHz. The packaging process can be applied to process wafer of RF MEMS switching devices. This work will help designers of RF-MEMS switches remove redundant features optimize structures in MEMS component packages to get maximize performance and help drive cost down