Novel Charge Trap Devices with NCBO Trap Layers for NVM or Image Sensor

ZnO or Al
_x
Ga
_1-x
N charge trap device showed large memory window (>7V) with fast P/E speed (plusmn17 V, 100 (_is) and excellent retention (10-year memory window of 6 V with small charge loss rate; ~l/5 of that of Si
₃
N
₄
). GaN and ZnO trap devices also showed the photo-sensitive programming due to their optoelectronics properties, providing the possibility of developing new type of high performance image sensor (QE ~ 80%)