XtreMOS : The First Integrated Power Transistor Breaking the Silicon Limit

Record performance of a novel power transistor integrated in a 0.35 μm power IC technology is reported. Measured specific on-state resistance of 33 mOhm*mm
²
for a 94 V breakdown is breaking the silicon-limit and is the lowest reported value to date. The device outperforms its nearest rival by a factor of 2.5. The device consists of the stacking of a vertical MOS on a fully depleted vertical drift layer, leading to a high cell density