Self-Aligned n- and p-channel GaAs MOSFETs on Undoped and P-type Substrates Using HfO2 and Silicon Interface Passivation Layer

In this work, using Si interface passivation layer (IPL) we present the electrical characteristics of TaN/HfO
₂
/GaAs both p-and n-MOSFET made on GaAs substrates with excellent electrical and reliability characteristics, thin EOT (~2.3-3.0nm), low frequency dispersion (< 5%) and high maximum mobility (1213 cm
²
/V-s) with high temperature PMA for n-MOSFET on undoped GaAs. Good inversion behavior with low D
_it
on lightly doped p-type GaAs has been obtained. P-channel GaAs high-k MOSFETs with excellent peak mobility have also been demonstrated