Impact of Stochastic Mismatch on Measured SRAM Performance of FinFETs with Resist/Spacer-Defined Fins: Role of Line-Edge-Roughness

Spacer-defined fin-patterning results in double/quadruple fin density and hence is attractive for high performance 32-nm CMOS applications. For the first time 55-nm gate-length FinFET SRAMs with resist- and spacer-defined fins are electrically compared. Due to short-range process variations, SRAM bit-cells with spacer-defined fins show approximately 2.5 times higher variability in static-noise-margin than resist-defined fins at VDD=1.2V. These SRAM test-cells achieve 130-nm planar-bulk comparable intra-bit-cell stochastic-mismatch and static noise margins