A Low-Cost, High-Performance, High-Voltage Complementary BiCMOS Process

The authors demonstrate a low-cost, high-performance, high-voltage complementary SiGe:C BiCMOS process. This technology offers three npn SiGe:C devices with f
_T
/BV
_CEO
values of 40GHz/5V, 63GHz/3.5V, and 120GHz/2.1V together with a 32GHz f
_T
/35GHz f
_max
/ 4.4V pnp SiGe:C HBT by adding only three bipolar masks to the underlying RF-CMOS process. With two additional implant masks, a 150GHz, 2.2V npn HBT and either a 43GHz f
_T
/ 65GHz f
_max
4.2V pnp or a 38GHz f
_T
/ 70GHz f
_max
, 5.8V pnp device can be fabricated additionally (in the npn case) or alternatively (pnp case) to the devices of the 3-mask module