Prediction and Control of NBTI -- Induced SRAM Vccmin Drift

We present a comprehensive study of the impact of NBTI on SRAM V
_ccmin
stability. We describe a novel simulation technique to predict the between -- die statistical distribution of V
_ccmin
drift due to NBTI. While the drift is a fundamental phenomenon, we show that by cell design and transistor process optimization, the drift can be reduced to tolerable levels.