Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric

Highly reliable characterization of fast transient in NBTI is achieved by performing initial and stressed I-V measurements in ultra-short time (100 ns). We further provide evidences that reaction-diffusion (R-D) model can not explain the fast transient in NBTI, while hole trapping (HT) model explains all experimental observations. We also establish that previous on-the-fly methods are sound except for the slow initial measurement. This caused the apparent disagreements among results from different groups using on-the-fly methods, which is resolved in this work by the fast on-the-fly technique