5B-2 Growth and Properties of Some Relaxor-Based Ferroelectric Single Crystals with High Curie Temperature by the Solution Bridgman and Modified Bridgman Techniques

The solution Bridgman technique and modified Bridgman one have been used to grow the binary system 0.65Pb(In
_frac12
Nb
_frac12
)O
₃
-0.35 PbTiO
₃
(starting composition) and ternary system 0.28Pb(In
_frac12
Nb
_frac12
)O
₃
-0.40Pb(Mg
_1/3
Nb
_2/3
)O
₃
-0.32PbTiO
₃
single crystals, respectively. The obtained PINT66/34 crystals show high T
_c
(269degC), T
_rt
(134degC) and good piezoelectric properties (d
₃₃
~2000pC/N) on the (001) cuts. Whereas, the as-grown PIMNT single crystals have reached the size of phi45mmtimes80mm boules and 25times25times1mm wafers. The large PIMNT crystals exhibit not only ultrahigh piezoelectric properties (d
₃₃
~1700-2200pC/N, epsiv-5000 and k
₃₃
~92%) on (001)-cuts, but also higher Curie temperature (T
_c
>190degC), higher rhombohedral-tetragonal transition temperature (T
_rt
~120degC) and higher coercive field (E
_c
~10.88kV/cm) than PMNT or PZNT crystals near their morphotropic phase boundary