A Low-power 4-T SAM Design for OFDM Demodulators in DVB Receiversers

This paper describes the design and implementation of a sequential access memory (SAM) in the OFDM demodulator of DVB-T receivers. The SAM decoder is based upon a ring counter to reduce the transistor count as well as the number of transitions per memory access. The SAM cell takes advantage of a negative word-line scheme to minimize the leakage current of the cell access transistors. The power consumption of memory access is then reduced. A 2-Kb SAM is carried out by 0.18 mum 1P6M CMOS process to verify the proposed design. The average power dissipation of the address decoder is 41.97 muW, while the average power dissipation of the overall SAM is 4.11 mW given a 20 MHz clock rate