High Temperature Growth of the Dilute Nitride GaAsN using a Nitrogen ECR Plasma Source

The dilute nitride GaAsN has been grown by MBE using an ECR nitrogen plasma source. This has allowed growth at a substrate temperature of 600 C, which in combination with an ion trap, has produced higher quality as-grown material. Layer chemistry has been assessed by SIMS, XRD and optical quality measured using photoluminescence.