A Study on RF Transistor Implementations on a 0.25 μm Digital CMOS Process

Modeling MOSFET parasitics is vital as the operating frequency increases and enters the GHz range. To improve RF design capability, several common source NMOS transistors were implemented on a 0.25 μm digital CMOS process using various layout techniques described in literature. Relevant parasitics were then extracted and compared to identify the techniques that would maximize transistor performance for RF applications