Monolithic Low-Noise Amplifiers up to 10 GHz in Silicon and SiGe Bipolar Technologies

The noise properties of silicon and SiGe bipolar technologies at identical design rules are evaluated by theory and by experimental LNAs designed for the frequencies of 2 GHz, 6 GHz, and 10 GHz. For a fair comparison the same circuit principle is used for all six LNAs, with gain of about 20 dB or above, suitable for the applications in wireless communications.