A complementary approach to the access design of millimeter power HFETs

We discuss the access design of millimeter power HFETs. On one hand, a numerical study is carried out to get the dependance of the extrinsic elements on design parameters such as airbridge height or drain/gate, gate/source distances. On the other hand, specific structures have been realized to extract parasitic elements from S parameter measurements. Finally, a comparison will be done.