Microwave noise of hot electrons in AlxGal-xAs channel. Procedure for measuring AlGaAs lattice heating

Hot electron noise temperatures using a pulsed measurement technique as finction of electric field in the frequency range 5OMHz-4GHz are presented in Si doped AIxGaIxAs alloy with 0.15, 0.2, 0.25 and 0.3 aluminium contents x. Diffusion coefficients D(E) are deduced. A method to detect self heating effects of devices under test has been developed.