InP Based Monolithic Integrated HEMT Amplifiers and Their Material Sensitivity

Experimental results on InP based In0.53+xGa0.47-xAs/In0.52Al0.48As HEMT monolithic integrated amplifiers are reported demonstrating the feasibility of this technology. Strained heteroepitaxy (x≥0.0) proved to enhance the device performance and upper frequency limits and was used for the MMIC-realization. More than 15 dB of gain were obtained from 6 to 9.5 GHz. The maximum gain was 22 dB and the return loss better than - 10 dB. In spite of the strained heteroepitaxy which can raise material control questions for MMIC realizations the experimental results for the samples (x=0.07 and x=0.22) showed good agreement with design objectives.